Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Fermi level pinning")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 65

  • Page / 3
Export

Selection :

  • and

Amphoteric defects in GaAs leading to Fermi-level pinning: A hybrid functional studyCOLLEONI, Davide; PASQUARELLO, Alfredo.Microelectronic engineering. 2013, Vol 109, pp 50-53, issn 0167-9317, 4 p.Article

The OAs defect in GaAs: A hybrid density functional studyCOLLEONI, Davide; PASQUARELLO, Alfredo.Applied surface science. 2014, Vol 291, pp 6-10, issn 0169-4332, 5 p.Conference Paper

Threshold voltage and turn-on voltage in organic transistors: Sensitivity to contact parasiticsGIRAUDET, L; SIMONETTI, O.Organic electronics (Print). 2011, Vol 12, Num 1, pp 219-225, issn 1566-1199, 7 p.Article

Effect of post-fabrication thermal annealing on Fermi-level pinning phenomenon in metal-pentacene junctionsJEONG, Seong-Guk; PARK, Hyung-Youl; LIM, Myung-Hoon et al.Organic electronics (Print). 2012, Vol 13, Num 9, pp 1511-1515, issn 1566-1199, 5 p.Article

On the Impact of Defects Close to the Gate Electrode on the Low-Frequency 1/f NoiseMAGNONE, Paolo; PANTISANO, Luigi; CRUPI, Felice et al.IEEE electron device letters. 2008, Vol 29, Num 9, pp 1056-1058, issn 0741-3106, 3 p.Article

Poly-Si-gate-related variability in decananometer MOSFETs with conventional architectureBROWN, Andrew R; ROY, Gareth; ASENOV, Asen et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 11, pp 3056-3063, issn 0018-9383, 8 p.Article

Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal GateYANG, Z. C; HUANG, A. P; ZHENG, X. H et al.IEEE electron device letters. 2010, Vol 31, Num 10, pp 1101-1103, issn 0741-3106, 3 p.Article

Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS C-V and G-V characteristicsMARTENS, K; WANG, W; DE KEERSMAECKER, K et al.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 2146-2149, issn 0167-9317, 4 p.Conference Paper

Effects of post metallization annealing on modulation in effective work function of platinum gate electrode in germanium metal-oxide-semiconductor devicesJAGADEESH CHANDRA, S. V; HONG, Woong-Ki; KIM, Jin-Sung et al.Surface and interface analysis. 2012, Vol 44, Num 11-12, pp 1436-1439, issn 0142-2421, 4 p.Conference Paper

Compositional dependence of work function and Fermi level position of the HfNx/SiO2 systemROTHSCHILD, J. A; EIZENBERG, M.Microelectronic engineering. 2009, Vol 86, Num 7-9, pp 1771-1773, issn 0167-9317, 3 p.Conference Paper

Induced Density of states model for weakly-interacting organic semiconductor interfacesVAZQUEZ, H; FLORES, F; KAHN, A et al.Organic electronics. 2007, Vol 8, Num 2-3, pp 241-248, issn 1566-1199, 8 p.Article

Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectricMOON SIG JOO; BYUNG JIN CHO; BALASUBRAMANIAN, N et al.IEEE electron device letters. 2005, Vol 26, Num 12, pp 882-884, issn 0741-3106, 3 p.Article

First-principle calculations on gate/dielectric interfaces : on the origin of work function shiftsPOUNOIS, G; LAUWERS, A; KITT, J et al.Microelectronic engineering. 2005, Vol 80, pp 272-279, issn 0167-9317, 8 p.Conference Paper

Investigation of Fermi-level pinning at silicon/porous-silicon interface by vibrating capacitor and surface photovoltage measurementsMIZSEI, J; SHRAIR, J. A; ZOLOMY, I et al.Applied surface science. 2004, Vol 235, Num 3, pp 376-388, issn 0169-4332, 13 p.Conference Paper

Ohmic contact to n-type Ge with compositional Ti nitrideWU, H. D; HUANG, W; LU, W. F et al.Applied surface science. 2013, Vol 284, pp 877-880, issn 0169-4332, 4 p.Article

Widely Tunable Work Function TaN/Ru Stacking Layer on HfLaO Gate DielectricWANG, X. P; LI, M.-F; LO, G. Q et al.IEEE electron device letters. 2008, Vol 29, Num 1, pp 50-53, issn 0741-3106, 4 p.Article

A unified model for metal/organic interfaces : IDIS, 'pillow' effect and molecular permanent dipolesVAQUEZ, H; DAPPE, Y. J; ORTEGA, J et al.Applied surface science. 2007, Vol 254, Num 1, pp 378-382, issn 0169-4332, 5 p.Conference Paper

The effects of inclusion of iodine in CdTe thin films on material properties and solar cell performanceCHAURE, N. B; SAMANTILLEKE, A. P; DHARMADASA, I. M et al.Solar energy materials and solar cells. 2003, Vol 77, Num 3, pp 303-317, issn 0927-0248, 15 p.Article

Origin of HfO2/GaAs interface states and interface passivation: A first principles studyWEICHAO WANG; KA XIONG; LEE, Geunsik et al.Applied surface science. 2010, Vol 256, Num 22, pp 6569-6573, issn 0169-4332, 5 p.Article

The Effect of Fixed Charge in Tunnel-Barrier Contacts for Fermi-Level Depinning in GermaniumROY, Arunanshu M; JASON LIN; SARASWAT, Krishna C et al.IEEE electron device letters. 2012, Vol 33, Num 6, pp 761-763, issn 0741-3106, 3 p.Article

Schottky barrier nano-MOSFET with an asymmetrically oxidized source/drain structureBAGHBANI PARIZI, K; PEYVAST, N; KHEYRADDINI MOUSAVI, B et al.Solid-state electronics. 2010, Vol 54, Num 1, pp 48-51, issn 0038-1101, 4 p.Article

On the impact of TiN film thickness variations on the effective work function of poly-Si/TiN/SiO2 and poly-Si/TiN/HfSiON gate stacksSINGANAMALLA, R; YU, H. Y; POURTOIS, G et al.IEEE electron device letters. 2006, Vol 27, Num 5, pp 332-334, issn 0741-3106, 3 p.Article

Gas sensor applications of porous Si layersMIZSEI, J.Thin solid films. 2007, Vol 515, Num 23, pp 8310-8315, issn 0040-6090, 6 p.Conference Paper

New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET developmentMARTENS, Koen; DE JAEGER, Brice; BONZOM, Renaud et al.IEEE electron device letters. 2006, Vol 27, Num 5, pp 405-408, issn 0741-3106, 4 p.Article

The influence of chemical treatment and thermal annealing on AlxGa1-xN surfaces : An XPS studyBOUDJELIDA, B; SIMMONDS, M. C; GEE, I et al.Applied surface science. 2006, Vol 252, Num 14, pp 5189-5196, issn 0169-4332, 8 p.Article

  • Page / 3